SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4275
DESCRIPTION
·With TO-3PN package
·High voltage ,high speed
·Low collector saturation voltage
·High reliability
APPLICATIONS
·Switching regulators
·DC-DC convertor
·Solid state relay
·General purpose power amplifiers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
500
400
10
10
3
80
150
-55~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction case
MAX
1.56
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=0.2A ;I
B
=0
I
C
=1mA ;I
E
=0
I
E
=1mA ;I
C
=0
I
C
=4A; I
B
=0.8A
I
C
=4A; I
B
=0.8A
V
CB
=450V; I
E
=0
V
EB
=10V; I
C
=0
I
C
=1A ; V
CE
=5V
25
MIN
400
500
10
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
2SC4275
TYP.
MAX
UNIT
V
V
V
0.8
1.2
100
100
65
V
V
µA
µA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=5A;R
L
=30@
I
B1
=0.5A; I
B2
=-1A
Pw = 20µs; DutyA2%
1.0
2.5
0.5
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4275
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4275
4
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