SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4350
DESCRIPTION
·With TO-220 package
·High DC current gain
·DARLINGTON
APPLICATIONS
·For high speed power switching
applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
100
100
7
10
0.5
40
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=0.1A ; I
B
=0
I
C
=1mA; I
E
=0;
I
E
=5mA; I
C
=0;
I
C
=5A; I
B
=5mA
I
C
=5A; I
B
=5mA
V
CB
=100V ;I
E
=0
V
EB
=7V; I
C
=0
I
C
=5A ; V
CE
=2V
2000
MIN
100
100
7
2SC4350
SYMBOL
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
TYP.
MAX
UNIT
V
V
V
1.5
2.0
1
5.0
20000
V
V
µA
mA
h
FE
classifications
M
2000-5000
L
4000-10000
K
8000-20000
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4350
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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