SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1407
DESCRIPTION
·With TO-220Fa package
·High breakdown voltage
·Low collector saturation voltage
·Complement to type 2SB1016
APPLICATIONS
·Power amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Fig.1 simplified outline (TO-220Fa) and symbol
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
100
100
5
5
0.5
30
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=50mA; I
B
=0
I
C
=4A; I
B
=0.4A
I
C
=1A; V
CE
=5V
V
CB
=100V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=4A ; V
CE
=5V
I
C
=1A; V
CE
=5V
f=1MHz ; V
CB
=10V;I
E
=0
40
20
MIN
100
2SD1407
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
TYP.
MAX
UNIT
V
2.0
1.5
100
1.0
240
V
V
µA
mA
12
100
MHz
pF
h
FE-1
Classifications
R
40-80
O
70-140
Y
120-240
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1407
Fig.2 Outline dimensions(unindicated tolerance: ±0.15 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1407
4
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