SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High reliability
·High voltage ,high speed switching
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC4419
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
900
800
10
6
3
100
150
-55~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction case
MAX
1.25
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4419
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=10mA ; I
B
=0
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
B
=0
I
C
=2A; I
B
=0.4A
I
C
=2A; I
B
=0.4A
V
CB
=900V ;I
E
=0
V
EB
=10V; I
C
=0
I
C
=2A ; V
CE
=5V
10
MIN
800
900
10
1.0
1.5
1.0
1.0
TYP.
MAX
UNIT
V
V
V
V
V
mA
mA
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=3A;I
B1
=0.6A;
I
B2
=-1.2A;R
L
=100C
P
W
=20µs,DutyD2%
1.0
4.0
0.8
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4419
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4419
4
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