SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4517 2SC4517A
DESCRIPTION
·With TO-220F package
·High voltage switching transistor
APPLICATIONS
·For switching regulator and
general purpose applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
PARAMETER
2SC4517
V
CBO
Collector-base voltage
2SC4517A
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open base
Open collector
Open emitter
1000
550
7
3
6
1.5
30
150
-55~150
V
V
A
A
A
W
CONDITIONS
VALUE
900
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=10mA ; I
B
=0
I
C
=1A; I
B
=0.2A
I
C
=1A; I
B
=0.2A
V
CB
=800V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=1A ; V
CE
=4V
I
E
=0; V
CB
=10V;f=1MHz
I
E
=-0.25A ; V
CE
=12V
2SC4517 2SC4517A
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
C
OB
f
T
MIN
550
TYP.
MAX
UNIT
V
0.5
1.2
100
100
10
35
6
30
V
V
µA
µA
pF
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=1.0A I
B1
=0.15A
I
B2
=-0.45A
V
CC
=250V ,R
L
=250B
0.7
4.0
0.5
µs
µs
µs
2
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