SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5439
DESCRIPTION
·With TO-220F package
·High collector breakdown voltage
·Excellent switching times
APPLICATIONS
·Switching regulator applications
·High voltage switching applications
·DC-DC converter applications
·Inverter lighting applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
30
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
1000
450
9
8
16
1
2
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=10mA; I
B
=0
I
C
=1mA; I
E
=0
I
C
=3.2A; I
B
=0.64 A
I
C
=3.2A; I
B
=0.64 A
V
CB
=1000V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=1mA ; V
CE
=5V
I
C
=1A ; V
CE
=5V
10
14
MIN
450
1000
2SC5439
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
V
1.0
1.5
100
10
V
V
µA
µA
34
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
B1
=0.64A ;I
B2
=1.28A
V
CC
>200V;R
L
=62.5@
0.2
2.0
0.15
3.5
µs
µs
µs
2
Industrial Control Electronics
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