SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2101
DESCRIPTION
·With TO-220Fa package
·DARLINGTON
APPLICATIONS
·Low frequency power amplifier
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Collector current peak
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
200
200
7
10
15
30
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2101
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Emitter-base breakdown voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
CONDITIONS
I
E
=50mA; I
C
=0
I
C
=0.1mA; I
C
=0
I
C
=25mA;R
BE
=;
I
C
=5A; L=5mH
I
C
=5A ;I
B
=10mA
I
C
=10A ;I
B
=100mA
I
C
=5A ;I
B
=10mA
I
C
=10A ;I
B
=100mA
V
CB
=180V; I
E
=0
V
CE
=180V; R
BE
=;
I
C
=5A ; V
CE
=3V
1500
MIN
7
200
200
170
1.5
3.0
2.0
3.5
10
50
TYP.
MAX
UNIT
V
V
V
V
V
V
V
V
µA
µA
SYMBOL
V
(BR)EBO
V
(BR)CBO
V
(BR)CEO
V
CEO(SUS)
V
CE(sat-1)
V
CE(sat)-2
V
BE(sat-1)
V
BE(sat-2)
I
CBO
I
CEO
h
FE
2