BD939F datasheet, PDF - EEWORLD Datasheet

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BD939F: DescriptionSILICON EPITAXIAL BASE POWER TRANSISTORS; File Size202KB，3 Pages; ManufacturerSAVANTIC; Websitehttp://www.svntc.com/

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BD939F Overview

SILICON EPITAXIAL BASE POWER TRANSISTORS

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SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BD939F

DESCRIPTION

·With TO-220F package

·Low collector saturation voltage

APPLICATIONS

·For power switching applications

PINNING

Base

Collector;connected to

mounting base

Emitter

Fig.1 simplified outline (TO-220F) and symbol

DESCRIPTION

Absolute maximum ratings(Ta=25

)

SYMBOL

CBO

CEO

EBO

stg

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector current-Peak

Collector dissipation

Junction temperature

Storage temperature

=25

Open emitter

Open base

Open collector

CONDITIONS

VALUE

120

100

150

-50~150

UNIT

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