SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BDX66B
DESCRIPTION
·With TO-3 package
·High
current
·DARLINGTON
APPLICATIONS
·Designed for power amplification and
switching applications.
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(peak)
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-100
-100
-5
-16
-20
-0.25
150
-55~200
-55~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.17
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BDX66B
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
CONDITIONS
I
C
=-0.1A ; I
B
=0;L=25mH
I
C
=-10A ;I
B
=-40mA
V
CB
=-60V; I
E
=0
T
C
=150
V
CE
=-50V; I
B
=0
V
EB
=-5V; I
C
=0
MIN
-100
-2
-1
-5
-3
-5
TYP.
MAX
UNIT
V
V
mA
mA
mA
SYMBOL
V
CEO(SUS)
V
CEsat
I
CBO
I
CEO
I
EBO
Switching times
t
on
t
off
Turn-on time
Turn-off time
1.0
3.5
µs
µs
I
C
=-10A ;
I
B1
=-I
B2
=0.04A
V
CC
=12V ;
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
BDX66B
Fig.2 Outline dimensions
3
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