SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDX77
DESCRIPTION
·With TO-220C package
·Low saturation voltage
·Complement to type BDX78
·Wide area of safe operation
APPLICATIONS
·For medium power switching and
amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
100
80
5
8
12
3
60
150
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
2.08
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDX77
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Base-emitter on voltage
CONDITIONS
I
C
=0.2A ;I
B
=0
I
C
=1mA ; I
E
=0
I
E
=1mA ; I
C
=0
I
C
=3A; I
B
=0.3A
I
C
=6A; I
B
=0.6A
I
C
=6A; I
B
=0.6A
V
CE
=30V ;I
B
=0;
V
CB
=40V ;I
E
=0;T
j
=150
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=2V
I
C
=0.3A ; V
CE
=3V
I
C
=3A;V
CE
=2V
30
7.0
1.5
MHz
V
MIN
80
100
5
1.0
1.5
2.0
0.2
1.0
0.5
TYP.
MAX
UNIT
V
V
V
V
V
V
mA
mA
mA
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BEsat
I
CEO
I
CBO
I
EBO
h
FE
f
T
V
BE
Switching times
t
on
t
o
ff
Turn-on time
Turn-off time
1.0
4.0
µs
µs
I
C
=2A
I
B1
=-I
B2
=0.2A;
2
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