SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2508A
DESCRIPTION
·With TO-3PN package
·High voltage
·High speed switching
APPLICATIONS
·For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current -peak
Base current
Base current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
700
7.5
8
15
4
6
125
150
-65~150
UNIT
V
V
V
A
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2508A
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Collector capacitance
CONDITIONS
I
C
=0.1A; I
B
=0;L=25mH
I
E
=1mA; I
C
=0
I
C
=4.5A; I
B
=1.1A
I
C
=4.5A; I
B
=1.29A
I
C
=4.5A; I
B
=1.7A
V
CE
=rated ;V
BE
=0
T
j
=125°C
V
EB
=7.5V; I
C
=0
I
C
=0.1A ; V
CE
=5V
I
C
=4.5A ; V
CE
=1V
V
CB
=10V;f=1MHz
6
4
13
5.5
80
MIN
700
7.5
13.5
5.0
1.0
1.3
1.0
2.0
1.0
26
7.5
pF
TYP.
MAX
UNIT
V
V
V
V
V
mA
mA
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BEsat
I
CES
I
EBO
h
FE-1
h
FE-2
C
C
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU2508A
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
京公网安备 11010802033920号
EEWORLD
