Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD388
DESCRIPTION
・With
TO-3 package
・High
power dissipation
APPLICATIONS
・For
use in power amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
电半
固
Collector current
PARAMETER
导½
CONDITIONS
Open emitter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
HAN
INC
SEM
GE
Open base
Open collector
T
C
=25℃
ON
IC
OR
DUT
VALUE
150
140
7
8
80
150
-55~150
UNIT
V
V
V
A
W
℃
℃
Collector power dissipation
Junction temperature
Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=0.2A ;I
B
=0
I
E
=10mA ;I
C
=0
I
C
=6A; I
B
=0.6A
I
C
=6A; I
B
=0.6A
V
CB
=150V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
I
C
=1A ; V
CE
=10V
50
MIN
140
7
TYP.
2SD388
MAX
UNIT
V
V
2.0
2.5
0.1
0.1
V
V
mA
mA
固电
Transition frequency
导½
半
HAN
INC
SEM
GE
ON
IC
OR
DUT
20
9
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD388
固电
导½
半
HAN
INC
SEM
GE
ON
IC
OR
DUT
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3