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BU931

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size107KB,3 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
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BU931 Overview

POWER TRANSISTOR

BU931 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeGENERAL PURPOSE POWER
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU931
DESCRIPTION
·With TO-3 package
·High voltage
·DARLINGTON
APPLICATIONS
·High ruggedness electronic ignitions.
·High voltage ignition coil driver
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings (Tc=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Base current (peak)
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
5
15
30
1
5
175
-65~200
-65~200
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
1.0
UNIT
/W
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