SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·Hihg voltage,high speed
APPLICATIONS
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2N6833
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Base current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
850
450
6
5
10
4
8
80
150
-65~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.56
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=0.1A ;I
B
=0
I
C
=1.5A;I
B
=0.15A
I
C
=3A;I
B
=0.4A
T
C
=100
I
C
=3A;I
B
=0.4A
T
C
=100
V
CE
=850V;V
BE
=-1.5V
T
C
=105
V
BE
=6V; I
C
=0
I
C
=3A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
I
E
=0 ; f=1kHz,V
CB
=10V
I
C
=0.25A ; V
CE
=10V;f=10MHz
7.5
5
20
15
MIN
450
2N6833
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BE sat
I
CEV
I
EBO
h
FE-1
h
FE-2
Cob
f
T
TYP.
MAX
UNIT
V
1.0
2.5
2.5
1.5
1.5
0.25
1.5
1.0
30
V
V
V
mA
mA
200
75
pF
MHz
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6833
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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