SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUV28
DESCRIPTION
·With TO-220C package
·Low collector saturation voltage
·Fast switching speed
APPLICATIONS
·High frequency and efficiency converters
·Switching regulators
·Motor control
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings (Tc=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Max.operating junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
400
200
7
10
2
70
150
-65~150
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-case
PARAMETER
Thermal resistance junction case
MAX
1.785
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
I
C
=30m A ;I
B
=0
I
C
=3A ;I
B
=0.3 A
I
C
=6A; I
B
=0.6A
I
C
=6A; I
B
=0.6A
V
CB
=300V;I
E
=0
V
EB
=5V; I
C
=0
MIN
200
TYP.
BUV28
SYMBOL
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
BEsat
I
CBO
I
EBO
MAX
UNIT
V
0.7
1.5
2.0
1.0
1.0
V
V
V
mA
mA
Switching times resistive load
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=5A;V
CC
=150V
I
B1
=-I
B1
=0.5A;
1.0
1.5
0.3
ms
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BUV28
Fig.2 Outline dimensions (unindicated tolerance: 0.1mm)
3
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