SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·Wide safe operating area
APPLICATIONS
·Power switching circuits
·Series and shunt-regulator driver
and output stages
·High-fidelity amplifers
·Solenoid drivers
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6261
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
90
80
7
4
2
50
150
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
3.5
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base -emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=0.1 A ; I
B
=0
I
C
=1.5A; I
B
=0.15A
I
C
=1.5A ; V
CE
=2V
V
CE
=80V;V
BE(off)
=-1.5V
T
C
=150
V
CE
=60V; I
B
=0
V
EB
=7V; I
C
=0
I
C
=4A ; V
CE
=2V
I
C
=1.5A ; V
CE
=2V
5
25
MIN
80
2N6261
SYMBOL
V
CEO(SUS)
V
CEsat
V
BE
I
CEV
I
CEO
I
EBO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
0.5
1.5
0.5
1.0
0.5
0.2
V
V
mA
mA
mA
100
2
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