SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUX47
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Intended for high voltage,fast
switching applications
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Bast current
Bast current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
850
400
7
9
15
8
10
125
175
-65~175
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
1.2
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=0.2A; I
B
=0;L=25mH
I
E
=50mA; I
C
=0;
I
C
=6A;I
B
=1.2 A
I
C
=9A;I
B
=3 A
I
C
=6A;I
B
=1.2 A
V
CE
=850V;V
BE
=-2.5V
T
C
=125
V
EB
=5V;I
C
=0
I
C
=1A ;V
CE
=5V
15
MIN
400
7
BUX47
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BEsat
I
CEV
I
EBO
h
FE
TYP.
MAX
UNIT
V
30
1.5
3
1.6
0.15
1.5
1
50
V
V
V
V
mA
mA
Switching times
T
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=6A;I
B1
=-I
B2
=1.2A;
V
CC
=150V
0.8
2.5
0.8
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BUX47
Fig.2 Outline dimensions
3
京公网安备 11010802033920号
EEWORLD
