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2SA754

Description
isc Silicon PNP Power Transistor
File Size216KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SA754 Overview

isc Silicon PNP Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SA754
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -50V(Min)
·Low
Collector Saturation Voltage-
: V
CE(sat)
= -1.3V(Max.) @ I
C
= -1.5A
·Good
Linearity of h
FE
APPLICATIONS
·Designed
for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
-50
V
-50
V
-4
V
-2
A
20
W
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
P
C
Total Power Dissipation@ T
C
=25℃
T
J
Junction Temperature
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn
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