SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA768
DESCRIPTION
·With TO-220 package
·Complement to type 2SC1826
APPLICATIONS
·For low frequency power
amplifier applicattions
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-60
-5
-4
30
150
-55~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-25mA ,I
B
=0
I
C
=-1mA ,I
E
=0
I
C
=-3A; I
B
=-0.3A
I
C
=-3A; I
B
=-0.3A
V
CB
=-60V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-10V
60
10
MIN
-60
-60
TYP.
2SA768
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
MAX
UNIT
V
V
-1.0
-1.5
-10
-10
240
V
V
µA
µA
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA768
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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