INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
2SB1343
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -100V(Min)
·High
DC Current Gain-
: h
FE
=
1000(Min)@ (V
CE
= -3V, I
C
= -2A)
APPLICATIONS
·Designed
for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
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VALUE
UNIT
-100
V
-100
V
-7
V
-8
A
-10
A
2
W
40
I
CM
Collector Current-Peak
Collector Power Dissipation
@T
a
=25℃
P
C
Collector Power Dissipation
@T
C
=25℃
T
J
Junction Temperature
150
℃
T
stg
Storage Temperature
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SB1343
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= -5mA; I
B
= 0
B
-100
V
V
(BR)CBO
Collector-Base Breakdown Voltage
I
C
= -50μA; I
E
= 0
-100
V
V
CE
(sat)
I
CBO
Collector-Emitter Saturation Voltage
I
C
= -3A; I
B
= -6mA
B
-1.5
V
μA
Collector Cutoff Current
V
CB
= -100V ; I
E
= 0
-10
I
EBO
Emitter Cutoff Current
V
EB
= -5V; I
C
= 0
-3
mA
h
FE
DC Current Gain
C
OB
Output Capacitance
f
T
Current-Gain—Bandwidth Product
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I
C
= -2A ; V
CE
= -3V
1000
I
E
= 0; V
CB
= -10V; f
test
= 1MHz
I
E
= 0.5A; V
CE
= -5V; f
test
= 10MHz
20000
90
pF
12
MHz
isc Website：www.iscsemi.cn
2
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