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2SB1470

Description
Silicon PNP Power Transistors
File Size82KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SB1470 Overview

Silicon PNP Power Transistors

Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1470
DESCRIPTION
·With
TO-3PL package
·Complement
to type 2SD2222
·High
DC current gain
·Low
collector saturation voltage
·DARLINGTON
APPLICATIONS
·For
power amplification
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
3.5
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-160
-160
-5
-8
-15
120
W
UNIT
V
V
V
A
A
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