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2SB1478

Description
isc Silicon PNP Darlington Power Transistor
File Size205KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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2SB1478 Overview

isc Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Darlington Power Transistor
2SB1478
DESCRIPTION
·High
DC Current Gain-
: h
FE
= 2000(Min)@ I
C
= -
2A
·Low
Collector Saturation Voltage-
: V
CE(
sat
)
= -2.0V(Max.) @I
C
= 5A
·Complement
to Type 2SD2237
APPLICATIONS
·Designed
for power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
-100
V
-100
V
-5
V
-8
A
60
W
150
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
P
C
T
j
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn
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