EEWORLDEEWORLDEEWORLD

Part Number

Search

DB25-02

Description
Bridge Rectifier Diode, 25A, 200V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size155KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric Compare View All

DB25-02 Online Shopping

Suppliers Part Number Price MOQ In stock  
DB25-02 - - View Buy Now

DB25-02 Overview

Bridge Rectifier Diode, 25A, 200V V(RRM),

DB25-02 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationBRIDGE, 6 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.05 V
Maximum non-repetitive peak forward current0.35 A
Number of components6
Maximum operating temperature125 °C
Maximum output current25 A
Maximum repetitive peak reverse voltage200 V
surface mountNO
Base Number Matches1
BL
GALAXY ELECTRICAL
THREE - PHASE SILICON BRIDGE
DB25-005 -- DB25-10
VOLTAGE RANGE
: 50 -- 1000 V
CURRENT: 25.0 A
FEATURES
Rating to 1000 V
Low forward voltage drop
DB25
~
25.8-24.8
_
-
~
5.3-5.1
16.5-15.5
28.7-28.4
~
+
+
6.35X0.8
Small size,simple installation
Tinned copper leads
10.5-9.5
24.5-22.5
Mounting: Thru hole for #6 screw
Metal Heat Sink
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
DB25
- 005
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
output current
@T
A
= 50
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
DB25
- 01
100
70
100
DB25
- 02
200
140
200
DB25
- 04
400
280
400
25.0
DB25
- 06
600
420
600
DB25 DB25
- 08
- 10
800
560
800
1000
700
1000
UNITS
V
V
V
A
Peak forward surge current
8.3ms single half-sine-wave
Maximum forwand voltage drop
per element at 12.5 A peak
Maximum reverse current
@T
A
=25
at rated DC blocking voltage
per element
@T
A
=100
Thermal resistance junction to case
Operating temperature range
Storage temperature range
I
FSM
V
F
350.0
1.05
10
A
V
A
mA
K/W
I
R
1.0
R
θJC
T
j
T
STG
2.4
- 55 --- + 125
- 55 --- + 150
www.galaxycn.com
Document Number: 0293002
BL
GALAXY ELECTRICAL
1.

DB25-02 Related Products

DB25-02 DB25-01 DB25-06
Description Bridge Rectifier Diode, 25A, 200V V(RRM), Bridge Rectifier Diode, 25A, 100V V(RRM), Bridge Rectifier Diode, 25A, 600V V(RRM),
Is it Rohs certified? conform to conform to conform to
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Configuration BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS BRIDGE, 6 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.05 V 1.05 V 1.05 V
Maximum non-repetitive peak forward current 0.35 A 0.35 A 0.35 A
Number of components 6 6 6
Maximum operating temperature 125 °C 125 °C 125 °C
Maximum output current 25 A 25 A 25 A
Maximum repetitive peak reverse voltage 200 V 100 V 600 V
surface mount NO NO NO
Maker - Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 42  2153  1327  435  1507  1  44  27  9  31 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号