Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4418
DESCRIPTION
·With
TO-220F package
·High
voltage
·High
speed switching
APPLICATIONS
·For
switching regulator and general
purpose applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
10
5
10
2
30
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
C
OB
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=25mA ; I
B
=0
I
C
=1.5A ;I
B
=0.3A
I
C
=1.5A ;I
B
=0.3A
V
CB
=500V; I
E
=0
V
EB
=10V; I
C
=0
I
C
=1.5A ; V
CE
=4V
I
E
=0; V
CB
=10V;f=1MHz
I
E
=-0.3A ; V
CE
=12V
10
MIN
400
2SC4418
TYP.
MAX
UNIT
V
0.5
1.3
100
100
30
30
20
V
V
μA
μA
pF
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=1.5A; I
B1
=0.15A
I
B2
=-0.3A
V
CC
=200V ,R
L
=133Ω
1.0
2.5
0.5
μs
μs
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4418
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4418
4
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