SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUX80
DESCRIPTION
·With TO-3 package
·High voltage
·Fast switching speed
APPLICATIONS
·Switching regulators
·Motor control
·High frequency and efficiency converters
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
800
400
10
10
15
5
100
150
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
1.1
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=0.1A; I
B
=0
I
C
=5 A;I
B
=1 A
I
C
=8 A;I
B
=2.5 A
I
C
=5 A;I
B
=1 A
I
C
=8 A;I
B
=2.5 A
V
CE
=800V;V
BE
=0
T
C
=125
V
EB
=10V; I
C
=0
I
C
=1.2A ; V
CE
=5V
30
MIN
400
BUX80
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
I
CES
I
EBO
h
FE
TYP.
MAX
UNIT
V
1.5
3.0
1.4
1.8
1.0
3.0
10
V
V
V
V
mA
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=5A ;I
B1
=1A; I
B2
=-2A
V
CC
=-250V
0.5
3.5
0.5
µs
µs
µs
2
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