SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1050
DESCRIPTION
·With TO-3 package
·High transition frequency
·Excellent safe operating area
APPLICATIONS
·For audio and general purpose
power amplifier applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-140
-140
-5
-12
100
175
-55~200
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2SA1050
SYMBOL
TYP.
MAX
UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Collector-emitter breakdown voltage
I
C
=-25mA ;I
B
=0
I
C
=-1mA ;I
E
=0
I
E
=-1mA ;I
C
=0
I
C
=-8A; I
B
=-0.8A
I
C
=-6A ; V
CE
=-5V
V
CB
=-140V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-6A ; V
CE
=-5V
I
C
=-1A ; V
CE
=-10V
-140
V
Collector-base breakdown voltage
-140
V
Emitter-base breakdown voltage
-5
V
Collector-emitter saturation voltage
-2.5
V
Base-emitter on voltage
-1.5
V
Collector cut-off current
-10
µA
Emitter cut-off current
-10
µA
DC current gain
55
160
DC current gain
35
Transition frequency
70
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1050
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
京公网安备 11010802033920号
EEWORLD
