BC328 datasheet, PDF - EEWORLD Datasheet

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BC328: Description500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92; Categorysemiconductor Discrete semiconductor; File Size64KB，1 Pages; ManufacturerDCCOM [ DC COMPONENTS ]

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BC328 Overview

500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

BC328 Parametric

Parameter Name	Attribute value
Maximum collector current	0.5000 A
Maximum Collector-Emitter Voltage	25 V
Number of terminals	3
Processing package description	TO-92-18R, 3 PIN
each_compli	Yes
state	Active
structure	SINGLE
Minimum DC amplification factor	100
jedec_95_code	TO-92
jesd_30_code	O-PBCY-T3
jesd_609_code	e0
moisture_sensitivity_level	NOT SPECIFIED
Number of components	1
Maximum operating temperature	150 Cel
Packaging Materials	PLASTIC/EPOXY
packaging shape	ROUND
Package Size	CYLINDRICAL
eak_reflow_temperature__cel_	NOT SPECIFIED
larity_channel_type	PNP
wer_dissipation_max__abs_	0.6250 W
qualification_status	COMMERCIAL
sub_category	Other Transistors
surface mount	NO
terminal coating	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
ime_peak_reflow_temperature_max__s_	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Rated crossover frequency	80 MHz

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DC COMPONENTS CO., LTD.

R

BC328

DISCRETE SEMICONDUCTORS

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description

Designed for driver and output stage of audio

amplifiers.

TO-92

.190(4.83)

.170(4.33)

.190(4.83)

.170(4.33)

2 Typ

o

Pinning

1 = Collector

2 = Base

3 = Emitter

Absolute Maximum Ratings

(T

A

=25

o

C)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

D

T

J

T

STG

Rating

-30

-25

-5

-800

625

+150

-55 to +150

Unit

V

mA

mW

o

.500

Min

(12.70)

.022(0.56)

.014(0.36)

.100

Typ

(2.54)

.148(3.76)

.132(3.36)

.022(0.56)

.014(0.36)

.050

Typ

(1.27)

3 2 1

C

.050

o

5

Typ.

5

Typ.

(1.27) Typ

Dimensions in inches and (millimeters)

C

Electrical Characteristics

o

Characteristic

(Ratings at 25 C ambient temperature unless otherwise specified)

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

(1)

Min

-30

-25

-5

-

100

40

-

2%

Typ

-

100

12

Max

-

-0.1

-0.7

-1.2

630

-

Unit

V

µA

V

-

MHz

pF

Test Conditions

I

C

=-100µA, I

E

=0

I

C

=-10mA, I

B

=0

I

E

=-100µA, I

C

=0

V

CB

=-25V, I

E

=0

V

EB

=-4V, I

C

=0

I

C

=-500mA, I

B

=-50mA

I

C

=-300mA, V

CE

=-1V

I

C

=-100mA, V

CE

=-1V

I

C

=-300mA, V

CE

=-1V

I

C

=-10mA, V

CE

=-5V, f=100MHz

V

CB

=-10V, f=1MHz, I

C

=0

Collector-Base Breakdown Volatge

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Volatge

Collector Cutoff Current

Emitter Cutoff Current

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

(1)

DC Current Gain

(1)

Transition Frequency

Output Capacitance

(1)Pulse Test: Pulse Width

V

CE(sat)

V

BE(on)

h

FE1

h

FE2

f

T

C

ob

380µs, Duty Cycle

Classification of h

FE1

Rank

Range

16

100~250

25

160~400

40

250~630

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