EEWORLDEEWORLDEEWORLD

Part Number

Search

BC338

Description
NPN SILICON AF MEDIUM POWER TRANSISTOR
File Size64KB,1 Pages
ManufacturerDCCOM [ DC COMPONENTS ]
Download Datasheet Compare View All

BC338 Online Shopping

Suppliers Part Number Price MOQ In stock  
BC338 - - View Buy Now

BC338 Overview

NPN SILICON AF MEDIUM POWER TRANSISTOR

DC COMPONENTS CO., LTD.
R
BC337
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for driver and output stage of audio
amplifiers.
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
2 Typ
o
o
Pinning
1 = Collector
2 = Base
3 = Emitter
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
50
45
5
800
625
+150
-55 to +150
Unit
V
V
V
mA
mW
o
o
.500
Min
(12.70)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.148(3.76)
.132(3.36)
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
3 2 1
C
.050
o
o
5
Typ.
5
Typ.
(1.27) Typ
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
(1)
Min
50
45
5
-
-
-
100
40
-
-
2%
Typ
-
-
-
-
-
-
-
-
210
4
Max
-
-
-
0.1
0.7
1.2
630
-
-
-
Unit
V
V
V
µA
V
V
-
-
MHz
pF
Test Conditions
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=45V, I
E
=0
I
C
=500mA, I
B
=50mA
I
C
=300mA, V
CE
=1V
I
C
=100mA, V
CE
=1V
I
C
=300mA, V
CE
=1V
I
C
=10mA, V
CE
=5V, f=100MHz
V
CB
=10V, f=1MHz, I
E
=0
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
(1)
(1)
V
CE(sat)
V
BE(on)
h
FE1
h
FE2
f
T
C
ob
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
380µs, Duty Cycle
Classification of h
FE1
Rank
Range
16
100~250
25
160~400
40
250~630

BC338 Related Products

BC338 BC337
Description NPN SILICON AF MEDIUM POWER TRANSISTOR 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
The car of the future without rearview mirrors
I just saw an article and I'd like to share it with you. {:1_113:} [align=center]Future Driving: Your Car Will Have Cameras Everywhere[/align] [align=left] Cameras replace side-view mirrors, which wil...
eric_wang Automotive Electronics
Looking for a microcontroller model
The requirements are as follows:1. The IO port can directly drive the buzzer and motor;2. Only 7 IO ports are required; 3. About 5x5mm;4. Common programming methods. Sorryfor the inconvenience.I found...
白衣渡江 PCB Design
What is the difference between BNC SMA SHV cables? Which cables should be used for different ports of a power amplifier?
What is the difference between BNC SMA SHV cables? Which cables should be used for different ports of a power amplifier?...
aigtekatdz Test/Measurement
Electrical Control and PLC Presentation Courseware
http://www.opc-china.com/Soft/UploadSoft/200603/ "Electrical Control and PLC" Presentation Courseware%20.rar...
totopper Industrial Control Electronics
Common Problems in PCB Circuit Layout Design
What is a part package? What is the difference between it and a part? (1) Part package refers to the appearance and solder joint position of the actual part when it is soldered to the circuit board. (...
探路者 PCB Design

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1757  1976  2485  1995  58  36  40  51  41  2 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号