BC547 datasheet, PDF - EEWORLD Datasheet

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BC547: Description100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92; Categorysemiconductor Discrete semiconductor; File Size65KB，1 Pages; ManufacturerDCCOM [ DC COMPONENTS ]

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100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

BC547 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	0.1000 A
Maximum Collector-Emitter Voltage	45 V
Processing package description	TO-92, 3 PIN
state	TRANSFERRED
packaging shape	round
Package Size	cylindrical
Terminal form	THROUGH-hole
terminal coating	tin lead
Terminal location	BOTTOM
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
Transistor component materials	silicon
Transistor type	Universal small signal
Minimum DC amplification factor	110

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DC COMPONENTS CO., LTD.

R

2SC2120

DISCRETE SEMICONDUCTORS

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for audio frequency amplifier applications.

TO-92

Pinning

1 = Emitter

2 = Collector

3 = Base

.190(4.83)

.170(4.33)

.190(4.83)

.170(4.33)

2 Typ

o

Absolute Maximum Ratings

(T

A

=25

o

C)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

D

T

J

T

STG

Rating

35

30

5

800

600

+150

-55 to +150

Unit

V

mA

mW

o

.500

Min

(12.70)

.022(0.56)

.014(0.36)

.100

Typ

(2.54)

.148(3.76)

.132(3.36)

.022(0.56)

.014(0.36)

.050

Typ

(1.27)

3 2 1

C

.050

o

5

Typ.

5

Typ.

(1.27) Typ

Dimensions in inches and (millimeters)

C

Electrical Characteristics

o

Characteristic

Collector-Base Breakdown Volatge

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Volatge

Collector Cutoff Current

Emitter Cutoff Current

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Gain

(1)

(Ratings at 25 C ambient temperature unless otherwise specified)

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

(1)

Min

35

30

5

-

45

100

40

-

2%

Typ

-

0.28

0.98

-

120

13

Max

-

0.1

0.7

1.3

-

320

-

Unit

V

µA

V

-

MHz

pF

Test Conditions

I

C

=100µA, I

E

=0

I

C

=2mA, I

B

=0

I

E

=100µA, I

C

=0

V

CB

=35V, I

E

=0

V

EB

=5V, I

C

=0

I

C

=500mA, I

B

=20mA

I

C

=500mA, I

B

=20mA

I

C

=5mA, V

CE

=1V

I

C

=100mA, V

CE

=1V

I

C

=500mA, V

CE

=1V

I

C

=10mA, V

CE

=5V

V

CB

=10V, f=1MHz, I

E

=0

V

CE(sat)

V

BE(sat)

h

FE1

h

FE2

h

FE3

f

T

Transition Frequency

Output Capacitance

(1)Pulse Test: Pulse Width

C

ob

380µs, Duty Cycle

Classification of h

FE2

Rank

Range

O

100~200

Y

160~320

BC547 Related Products

	BC547	2SC2120	2SD667A
Description	100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Number of terminals	3	3	3
Transistor polarity	NPN	NPN	NPN
Maximum collector current	0.1000 A	0.1000 A	0.1000 A
Maximum Collector-Emitter Voltage	45 V	45 V	45 V
Processing package description	TO-92, 3 PIN	TO-92, 3 PIN	TO-92, 3 PIN
state	TRANSFERRED	TRANSFERRED	TRANSFERRED
packaging shape	round	round	round
Package Size	cylindrical	cylindrical	cylindrical
Terminal form	THROUGH-hole	THROUGH-hole	THROUGH-hole
terminal coating	tin lead	tin lead	tin lead
Terminal location	BOTTOM	BOTTOM	BOTTOM
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	single	single	single
Number of components	1	1	1
Transistor component materials	silicon	silicon	silicon
Transistor type	Universal small signal	Universal small signal	Universal small signal
Minimum DC amplification factor	110	110	110

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