SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
・V
DSS(Min.)
= 600V, I
D
= 6A
・R
DS(ON)
=1.4
Ω(Max)
@V
GS
=10V
・Qg(typ.)
=16nC
KF6N60P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF6N60P
MAXIMUM RATING
(Tc=25℃)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@T
C
=25℃
Drain Current
@T
C
=100℃
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25℃
Derate above25℃
T
j
T
stg
SYMBOL
V
DSS
V
GSS
I
D
I
DP
E
AS
E
AR
dv/dt
P
D
100
0.8
150
-55½150
6
3.8
15
180
4
4.5
41.7
0.33
RATING
KF6N60P
600
±30
6*
3.8*
15*
mJ
mJ
V/ns
W
W/℃
℃
℃
A
KF6N60F
UNIT
V
V
KF6N60F
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
R
thJC
R
thJA
1.25
62.5
3.0
62.5
℃/W
℃/W
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
2011. 6. 30
Revision No : 0
1/2
KF6N60P/F
ELECTRICAL CHARACTERISTICS
(Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
BV
DSS
ΔBV
DSS
/ΔT
j
I
DSS
V
th
I
GSS
R
DS(ON)
I
D
=250μ V
GS
=0V
A,
I
D
=250μ Referenced to 25℃
A,
V
DS
=600V, V
GS
=0V,
V
DS
=V
GS
, I
D
=250μ
A
V
GS
=±30V, V
DS
=0V
V
GS
=10V, I
D
=3.0A
600
-
-
2.5
-
-
-
0.6
-
-
-
1.2
-
-
10
4.5
±100
1.4
V
V/℃
μ
A
V
nA
Ω
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SP
V
SD
t
rr
Q
rr
V
GS
<V
th
I
S
=6A, V
GS
=0V
I
S
=6A, V
GS
=0V,
s
dIs/dt=100A/μ
-
-
-
-
-
-
-
-
390
2.2
6
A
24
1.4
-
-
V
ns
μ
C
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
DS
=25V, V
GS
=0V, f=1.0MHz
V
DD
=300V, I
D
=6A
R
G
=25Ω
V
GS
=10V
(Note4,5)
V
DS
=480V, I
D
=6A
V
GS
=10V
(Note4,5)
-
-
-
-
-
-
-
-
-
-
16
3.1
6.0
20
20
50
20
710
80
8.0
-
-
-
-
-
ns
-
-
-
-
-
pF
nC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 9.5mH, I
S
=6A, V
DD
=50V, R
G
= 25Ω, Starting T
j
= 25℃.
Note 3) I
S
≤6A,
dI/dt≤100A/㎲, V
DD
≤BV
DSS
, Starting T
j
= 25℃.
Note 4) Pulse Test : Pulse width
≤
300㎲, Duty Cycle
≤
2%.
Note 5) Essentially independent of operating temperature.
Marking
2011. 6. 30
Revision No : 0
2/2
FPGA/CPLD
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