MJE13005 datasheet, PDF - EEWORLD Datasheet

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MJE13005: Description4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size45KB，1 Pages; ManufacturerDCCOM [ DC COMPONENTS ]

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MJE13005 Overview

4 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB

MJE13005 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	4 A
Maximum Collector-Emitter Voltage	400 V
Processing package description	TO-220, 3 PIN
state	ACTIVE
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	THROUGH-hole
terminal coating	tin lead
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	single
Shell connection	COLLECTOR
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Maximum ambient power consumption	2 W
Transistor type	universal power supply
Minimum DC amplification factor	8
Rated crossover frequency	4 MHz

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DC COMPONENTS CO., LTD.

MJE13005

DISCRETE SEMICONDUCTORS

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for high-voltage, high-speed power switching

inductive circuits.

TO-220AB

Pinning

1 = Base

2 = Collector

3 = Emitter

.405(10.28)

.380(9.66)

.185(4.70)

.173(4.40)

Φ.151

Typ

.055(1.39)

Φ(3.83)

.045(1.15)

.295(7.49)

.220(5.58)

.625(15.87)

.570(14.48)

.350(8.90)

.330(8.38)

1 2 3

.640

Typ

(16.25)

Absolute Maximum Ratings

=25

Characteristic

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Total Power Dissipation(T

=25 C)

Junction Temperature

Storage Temperature

Symbol

CEX

CEO

EBO

STG

Rating

700

400

+150

-55 to +150

Unit

.055(1.40)

.045(1.14)

.037(0.95)

.030(0.75)

.562(14.27)

.500(12.70)

.100

Typ

(2.54)

.024(0.60)

.014(0.35)

Dimensions in inches and (millimeters)

Electrical Characteristics

Characteristic

(Ratings at 25 C ambient temperature unless otherwise specified)

Symbol

CEX

CEO

CEX

EBO

CE(sat)1

(1)

Min

700

400

Typ

Max

0.5

0.6

1.2

1.6

Unit

Test Conditions

=1mA, V

BE(off)

=1.5V

=10mA

=700V, V

BE(off)

=1.5V

=9V

=1A, I

=200mA

=2A, I

=500mA

=4A, I

=1A

=1A, I

=200mA

=2A, I

=500mA

=0.5A, V

=5V

=1A, V

=5V

=2A, V

=5V

Collector-Emitter Breakdown Volatge

Collector Cutoff Current

Emitter Cutoff Current

Collector-Emitter Saturation Voltage

CE(sat)2

CE(sat)3

BE(sat)1

BE(sat)2

FE1

FE2

FE3

Base-Emitter Saturation Voltage

(1)

DC Current Gain

(1)

(1)Pulse Test: Pulse Width

380µs, Duty Cycle

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