PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTK 102N30P
V
DSS
= 300 V
I
D25
= 102 A
Ω
R
DS(on)
≤
33 mΩ
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25° C to 150° C
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
External lead current limit
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
,
T
J
≤
150° C, R
G
= 4
Ω
T
C
= 25° C
Maximum Ratings
300
300
±20
±30
102
75
250
60
60
2.5
10
700
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
TO-264 (IXTK)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l
l
l
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-264
300
°
C
260
°
C
1.13/10 Nm/lb.in.
10
g
Advantages
l
l
l
Easy to mount
Space savings
High power density
Symbol
Test Conditions
(T
J
= 25° C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 500µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
300
2.5
5.0
±200
25
250
33
V
V
nA
µA
µA
m
Ω
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
© 2006 IXYS All rights reserved
DS99130E(12/05)
IXTK 102N30P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Min.
Typ.
Max.
45
57
7500
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1150
230
30
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A
R
G
= 3.3
Ω
(External)
28
130
30
224
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
50
110
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.18° C/W
0.15
°
C/W
TO-264 (IXTK) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
Test Conditions
V
GS
= 0 V
Repetitive
Characteristic Values
(T
J
= 25° C, unless otherwise specified)
Min.
Typ.
Max.
102
250
1.5
250
3.3
A
A
V
ns
µC
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
= 25 A, -di/dt = 100 A/µs
V
R
= 100 V, V
GS
= 0 V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXTK 102N30P
Fig. 1. Output Characte ris tics
@ 25
º
C
110
100
90
80
V
GS
= 10V
9V
8V
250
225
200
175
V
GS
= 10V
9V
Fig. 2. Exte nde d Output Characte r is tics
@ 25
º
C
I
D
- Amperes
I
D
- Amperes
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
5V
6V
7V
8V
7V
150
125
100
75
50
25
0
6V
5V
0
2
4
6
8
10
12
14
16
18
20
V
DS
- V olts
Fig. 3. Output Characte ris tics
@ 125
º
C
110
100
90
80
V
GS
= 10V
9V
8V
7V
2.8
2.6
2.4
V
DS
- V olts
Fig. 4. R
DS(on
)
Norm alize d to 0.5 I
D25
V alue vs . Junction Te m pe ratur e
V
GS
= 10V
R
DS(on)
- Normalized
2.2
2
1.8
1.6
1.4
1.2
1
0.8
I
D
= 102A
I
D
= 51A
I
D
- Amperes
70
60
50
40
30
20
10
0
0
1
2
3
4
5
6V
5V
6
7
8
9
0.6
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- V olts
Fig. 5. R
DS(on)
Nor m alize d to
2.6
2.4
2.2
T
J
- Degrees Centigrade
Fig. 6. Drain Curre nt vs . Cas e
Te m pe rature
90
80
70
0.5 I
D25
V alue vs . I
D
V
GS
= 10V
External Lead Current Limit
R
DS(on)
- Normalized
I
D
- Amperes
T
J
= 25ºC
2
1.8
1.6
1.4
1.2
1
0.8
0
25
50
T
J
= 125ºC
60
50
40
30
20
10
0
75
I
D
- A mperes
100 125 150 175 200 225 250
-50
-25
T
C
- Degrees Centigrade
0
25
50
75
100
125
150
© 2006 IXYS All rights reserved
IXTK 102N30P
Fig. 7. Input Adm ittance
150
100
90
125
100
80
70
T
J
= -40ºC
25ºC
125ºC
Fig. 8. Trans conductance
g
fs
- Siemens
5.5
6
6.5
7
7.5
I
D
- Amperes
60
50
40
30
20
10
75
50
25
T
J
= 125ºC
25ºC
-40ºC
0
3.5
4
4.5
5
0
0
25
50
75
100
125
150
175
200
V
GS
- V olts
Fig. 9. Sour ce Cur re nt vs .
Source -To-Drain V oltage
300
10
9
250
200
8
7
V
DS
= 150V
I
D
= 51A
I
G
= 10m A
I
D
- A mperes
Fig. 10. Gate Char ge
I
S
- Amperes
V
G S
- Volts
T
J
= 125ºC
T
J
= 25ºC
6
5
4
3
2
1
150
100
50
0
0.4
0.6
0
V
SD
- V olts
0.8
1
1.2
1.4
0
25
50
75
100
125
150
175
200
225
Q
G
- nanoCoulombs
Fig. 12. For w ard-Bias
Safe Ope rating Are a
1000
C iss
R
DS(on)
Lim it
T
J
= 150ºC
T
C
= 25ºC
25µs
100µs
1m s
10
10m s
Fig. 11. Capacitance
10000
Capacitance - picoFarads
1000
C oss
I
D
- Amperes
100
DC
f = 1MH z
C rs s
100
0
5
10
15
1
20
25
30
35
40
10
100
1000
V
DS
- V olts
V
DS
- V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTK 102N30P
Fig. 13. M axim um Trans ie nt The rm al Re s is tance
1.00
R
(th)JC
- ºC/W
0.10
0.01
1
10
100
1000
Pulse Width - milliseconds
© 2006 IXYS All rights reserved
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