IXLF 19N250A
High Voltage IGBT
in High Voltage
ISOPLUS i4-PAC
TM
I
C25
= 32 A
V
CES
= 2500 V
V
CE(sat)
= 3.2 V
t
f
= 250 ns
5
1
1
2
2
IGBT
Symbol
V
CES
V
GES
I
C25
I
C90
I
CM
V
CEK
P
tot
T
C
= 25°C
T
C
= 90°C
V
GE
=
±
15 V; R
G
= 47
Ω;
T
VJ
= 125°C
RBSOA, Clamped inductive load; L = 100 µH
T
C
= 25°C
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
2500
±
20
32
19
70
1200
250
V
V
A
A
A
V
W
Features
•
High Voltage IGBT
- substitute for high voltage MOSFETs
with significantly lower voltage drop
and comparable switching speed
- substitute for high voltage thyristors
with voltage control of turn on & turn off
- substitute for electromechanical trigger
and discharge relays
•
ISOPLUS i4-PAC
TM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
- UL registered
E72873
Applications
•
switched mode power supplies
•
DC-DC converters
•
resonant converters
•
laser generators, x ray generators
•
discharge circuits
5
Symbol
Conditions
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ. max.
3.2
4.7
5
0.2
500
100
50
600
250
15
30
2.28
103
43
142
3.9
8
0.15
V
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
pF
pF
nC
0.5 K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
Q
Gon
R
thJC
I
C
= 19 A; V
GE
= 15 V; T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 1 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load, T
VJ
= 125°C
V
CE
= 1500 V; I
C
= 19 A
V
GE
= ±15 V; R
G
= 47
Ω
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 1500V; V
GE
= 15 V; I
C
= 19 A
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
1-4
0527
IXLF 19N250A
Component
Symbol
T
VJ
T
stg
V
ISOL
F
C
Symbol
d
S
,d
A
d
S
,d
A
R
thCH
Weight
I
ISOL
≤
1 mA; 50/60 Hz
mounting force with clip
Conditions
C pin - E pin
pin - backside metal
with heatsink compound
Conditions
Maximum Ratings
-55...+150
-55...+125
2500
20...120
°C
°C
V~
N
Dimensions in mm (1 mm = 0.0394")
Characteristic Values
min.
typ. max.
7.0
5.5
0.15
9
mm
mm
K/W
g
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
2-4
0527
IXLF 19N250A
100
A
I
C
T
J
= 25°C
V
GE
= 17 V
15 V
13 V
50
A
I
C
40
30
20
10
9V
T
J
= 125°C
V
GE
= 17 V
15 V
13 V
80
60
40
20
0
0
1
2
3
4
5
6
7
V
CE
11 V
11 V
9V
0
8
9
V
0
1
2
3
4
5
6
7
V
CE
8
9
V
Fig. 1 Typ. Output Characteristics
Fig. 2 Typ. Output Characteristics
80
A
70
I
C
V
CE
= 20 V
10000
f = 1 Mhz
pF
Capacitance
1000
C
ies
60
50
40
30
20
10
0
6
7
8
9
10
11
12
V
GE
T
J
= 125°C
100
C
oes
C
res
T
J
= 25°C
10
13
14
V
15
0
10
20
30
V
CE
V
40
Fig. 3 Typ. Transfer Characteristics
Fig. 4 Capacitance curves
20
V
V
CE
= 1500 V
I
C
= 19 A
T
J
= 25°C
80
A
I
CM
15
V
GE
60
R
G
= 47Ω
T
J
= 125°C
V
CEK
< V
CES
10
40
5
20
0
0
50
100
Q
G
0
150
nC
0
400
800 1200 1600 2000 2400
V
V
CE
Fig. 5 Typ. Gate Charge characteristics
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
3-4
0527
Fig. 6 Reverse Biased Safe Operating Area
RBSOA
IXLF 19N250A
50
mJ
200
V
CE
= 1500 V
V
GE
= ±15 V
R
G
= 47
Ω
T
J
= 125°C
60
mJ
50
t
E
off
V
CE
= 1500 V
V
GE
= ±15 V
R
G
= 47
Ω
T
J
= 125°C
ns
160
t
r
t
d(on)
120
40
E
on
1200
ns
1000
800 t
600
t
d(off)
400
200
0
40
30
30
20
10
0
0
E
on
80
20
40
0
10
0
0
E
off
10
20
30
I
C
t
f
40 A
10
20
30
I
C
40
A
Fig. 7
Typ. turn on energy and switching
times versus collector current
Fig. 8
Typ. turn off energy and switching
times versus collector current
35
mJ
30
E
on
25
V
CE
= 1500 V
V
GE
= ±15 V
I
C
= 19 A
T
J
= 125°C
t
d(on)
350
ns
300
250 t
200
40
mJ
E
off
30
E
off
V
CE
= 1500 V
V
GE
= ±15 V
I
C
= 19 A
T
J
= 125°C
2000
ns
1500
t
d(off)
1000
t
t
r
20
15
10
5
0
0
50
100
150
R
G
E
on
20
150
100
50
10
t
f
500
200
Ω
250
0
0
0
50
100
150
R
G
200
Ω
250
0
Fig. 9
Typ. turn on energy and switching
times versus gate resistor
1
K/W
Z
thJC
0.1
Fig. 10
Typ. turn off energy and switching
times versus gate resistor
single pulse
0.01
0.001
IXLF19N250A
0.01
0.1
t
1
s 10
Fig. 11 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
4-4
0527
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications.Read complete Disclaimer Notice at
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