Advance Technical Information
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
, High dv/dt
IXFR 4N100Q
V
DSS
= 1000 V
I
D25
= 3.5 A
R
DS(on)
= 3.0
Ω
t
rr
≤
200ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Note 1
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, di/dt
≤
100 A/µs, V
DD
≤
V
DSS
T
J
≤
150°C, R
G
= 2
Ω
T
C
= 25°C
Maximum Ratings
1000
1000
±20
±30
3.5
16
4
20
700
5
80
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
mJ
V/ns
W
°C
°C
°C
°C
V~
g
ISOPLUS 247
TM
E153432
Isolated backside*
G = Gate
S = Source
D = Drain
* Patent pending
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
t = 1 min
300
2500
5
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<30pF)
l
l
l
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
l
Fast intrinsic Rectifier
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1000
3.0
V
5.0 V
±100
nA
T
J
= 25°C
T
J
= 125°C
50
µA
1 mA
3.0
Ω
Applications
l
DC-DC converters
l
l
l
l
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 1.5 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= I
T
Notes 2, 3
Advantages
l
Easy assembly
l
l
Space savings
High power density
© 2001 IXYS All rights reserved
98860 (10/01)
IXFR 4N100Q
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
Notes 2, 3
1.5
2.5
1050
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
120
30
17
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
R
G
= 2
Ω
(External), Notes 2, 3
15
32
18
39
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
Notes 2, 3
9
22
1.57
0.15
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
Dim.
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
ISOPLUS 247
TM
Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= I
T
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
Repetitive; Note 1
I
F
= I
S
, V
GS
= 0 V, Notes 2, 3
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
80
320
1.5
200
A
A
V
ns
µ
C
A
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
See IXFH4N100 data sheet for
Characterisitic curves.
I
F
= 50A,-di/dt = 100 A/µs, V
R
= 100 V
1.2
10
Note: 1. Pulse width limited by T
JM
2. Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
3. I
T
= 2 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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