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KDR368E-RTK/P

Description
Rectifier Diode, Schottky, 1 Element, 0.1A, 20V V(RRM), Silicon, ESC, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size365KB,2 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

KDR368E-RTK/P Overview

Rectifier Diode, Schottky, 1 Element, 0.1A, 20V V(RRM), Silicon, ESC, 2 PIN

KDR368E-RTK/P Parametric

Parameter NameAttribute value
package instructionESC, 2 PIN
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.15 W
Maximum repetitive peak reverse voltage20 V
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Base Number Matches1
SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
・Low
Forward Voltage : V
F(2)
=0.23V (Typ.)
・Small
Package : ESC.
CATHODE MARK
C
1
KDR368E
SCHOTTKY BARRIER TYPE DIODE
E
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10ms)
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
P
D
T
j
T
stg
RATING
20
20
200
100
1
150*
125
-55½125
UNIT
V
V
mA
mA
A
mW
2
D
F
B
A
1. ANODE
2. CATHODE
DIM
A
B
C
D
E
F
MILLIMETERS
_
1.60 + 0.10
_ 0.10
1.20 +
_
0.80 + 0.10
_
0.30 + 0.05
_
0.60 + 0.10
_
0.13 + 0.05
ESC
* : Mounted on a glass epoxy circuit board of 20×20mm,
pad dimension of 4×4mm.
Marking
Type Name
U4
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
V
F(1)
Forward Voltage
V
F(2)
V
F(3)
Reverse Current
Total Capacitance
I
R
C
T
I
F
=1mA
I
F
=5mA
I
F
=100mA
V
R
=10V
V
R
=10V, f=1MHz
TEST CONDITION
MIN.
-
-
-
-
-
TYP.
0.18
0.23
0.35
-
20
MAX.
-
0.30
0.50
20
40
μ
A
pF
V
UNIT
2003. 2. 25
Revision No : 1
1/2
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