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ZMV829

Description
Variable Capacitance Diode, 8.2pF C(T), 25V, Silicon
CategoryDiscrete semiconductor    diode   
File Size44KB,2 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric View All

ZMV829 Overview

Variable Capacitance Diode, 8.2pF C(T), 25V, Silicon

ZMV829 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-G2
Reach Compliance Codecompliant
ECCN codeEAR99
Minimum breakdown voltage25 V
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Minimum diode capacitance ratio4.3
Nominal diode capacitance8.2 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.33 W
Certification statusNot Qualified
minimum quality factor250
Maximum repetitive peak reverse voltage25 V
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Base Number Matches1
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