ZXMN6A09G
60V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 60V; R
DS(ON)
= 0.045
DESCRIPTION
I
D
= 5.1A
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
SOT223
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Relay and Solenoid driving
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMN6A09GTA
ZXMN6A09GTC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
1000 units
4000 units
DEVICE MARKING
•
ZXMN
6A09
Top View
ISSUE 1 - JANUARY 2005
1
SEMICONDUCTORS
ZXMN6A09G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V
GS
=10V;
(V
GS
=10V;
(V
GS
=10V; T
A
=25°C)
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(c)
Power Dissipation at T
A
=25°C
Linear Derating Factor
(a)(d)
(b)
SYMBOL
V
DSS
V
GS
T
A
=25°C)
(b)
T
A
=70°C)
(b)
(a)
I
D
LIMIT
60
20
6.9
5.6
5.0
30.6
3.5
30.6
2.0
16
3.9
31
-55 to +150
UNIT
V
V
A
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
A
A
A
W
mW/°C
W
mW/°C
°C
Power Dissipation at T
A
=25°C
(b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
(a)(d)
Junction to Ambient
(b)(d)
SYMBOL
R
θJA
R
θJA
VALUE
62.5
32.2
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature.
ISSUE 1 - JANUARY 2005
SEMICONDUCTORS
2
ZXMN6A09G
CHARACTERISTICS
ISSUE 1 - JANUARY 2005
3
SEMICONDUCTORS
ZXMN6A09G
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V
SD
t
rr
Q
rr
0.85
26.3
26.6
0.95
V
ns
nC
T
J
=25°C, I
S
=6.6A,
V
GS
=0V
T
J
=25°C, I
F
=3.5A,
di/dt= 100A/µs
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
4.9
5.0
25.3
4.6
12.4
24.2
5.2
3.5
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=15V,V
GS
=10V,
I
D
=3.5A
V
DD
=15V, I
D
=3.5A
R
G
≅6.0Ω,
V
GS
=10V
(refer to test
circuit)
V
DS
=15V,V
GS
=5V,
I
D
=3.5A
C
iss
C
oss
C
rss
1407
121
59
pF
pF
pF
V
DS
=40 V, V
GS
=0V,
f=1MHz
V
(BR)DSS
60
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
15
1.0
0.045
0.070
1
100
V
µA
nA
V
Ω
Ω
S
I
D
=250µA, V
GS
=0V
V
DS
=60V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I =250µA, V
DS
= V
GS
D
V
GS
=10V, I
D
=8.2A
V
GS
=4.5V, I
D
=7.4A
V
DS
=15V,I
D
=8.2A
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JANUARY 2005
SEMICONDUCTORS
4
ZXMN6A09G
TYPICAL CHARACTERISTICS
ISSUE 1 - JANUARY 2005
5
SEMICONDUCTORS
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