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UZXMN6A09GTA

Description
Small Signal Field-Effect Transistor, 5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LOW PROFILE SOIC-4
CategoryDiscrete semiconductor    The transistor   
File Size552KB,8 Pages
ManufacturerDiodes Incorporated
Environmental Compliance
Download Datasheet Parametric Compare View All

UZXMN6A09GTA Overview

Small Signal Field-Effect Transistor, 5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LOW PROFILE SOIC-4

UZXMN6A09GTA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)5 A
Maximum drain-source on-resistance0.045 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
ZXMN6A09G
60V SOT223 N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
60
R
DS(on)
( )
0.040 @ V
GS
= 10V
0.060 @ V
GS
= 4.5V
I
D
(A)
7.5
6.2
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
D
G
S
Applications
DC-DC converters
Power management functions
Disconnect switches
Motor control
S
D
D
G
Ordering information
Device
ZXMN6A09GTA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
1000
Pinout - top view
Device marking
ZXMN
6A09
Issue 3 - June 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com

UZXMN6A09GTA Related Products

UZXMN6A09GTA
Description Small Signal Field-Effect Transistor, 5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LOW PROFILE SOIC-4
Is it Rohs certified? conform to
Parts packaging code SOT
package instruction SMALL OUTLINE, R-PDSO-G4
Contacts 4
Reach Compliance Code not_compliant
ECCN code EAR99
Shell connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V
Maximum drain current (ID) 5 A
Maximum drain-source on-resistance 0.045 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G4
JESD-609 code e3
Humidity sensitivity level 1
Number of components 1
Number of terminals 4
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260
Polarity/channel type N-CHANNEL
Certification status Not Qualified
surface mount YES
Terminal surface Matte Tin (Sn)
Terminal form GULL WING
Terminal location DUAL
Maximum time at peak reflow temperature 40
transistor applications SWITCHING
Transistor component materials SILICON
Base Number Matches 1
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