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ZC834TA

Description
Variable Capacitance Diode, 47pF C(T), 25V, Silicon, Hyperabrupt
CategoryDiscrete semiconductor    diode   
File Size64KB,2 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

ZC834TA Overview

Variable Capacitance Diode, 47pF C(T), 25V, Silicon, Hyperabrupt

ZC834TA Parametric

Parameter NameAttribute value
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Minimum breakdown voltage25 V
ConfigurationSINGLE
Diode Capacitance Tolerance20%
Minimum diode capacitance ratio5
Nominal diode capacitance47 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.33 W
Certification statusNot Qualified
minimum quality factor200
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Varactor Diode ClassificationHYPERABRUPT
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