MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR12CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR12CM
OUTLINE DRAWING
10.5 MAX
3.2±0.2
Dimensions
in mm
4.5
4
1.3
16 MAX
∗
12.5 MIN
3.8 MAX
TYPE
NAME
VOLTAGE
CLASS
1.0
0.8
2.5
2.5
4.5
7.0
φ3.6±0.2
0.5
2.6
123
24
1
2
33
4
∗
Measurement point of
case temperature
• I
T (RMS)
...................................................................... 12A
• V
DRM
..............................................................400V/600V
• I
FGT
!
, I
RGT
!
, I
RGT
#
......................... 30mA (20mA)
V5
1
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
T
2
TERMINAL
TO-220
APPLICATION
Contactless AC switches, light drimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · refrigerator · washing machine ·
infrared kotatsu · carpet · electric fan, solenoid drivers, small motor control,
copying machine, electric tool, other general purpose control applications
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
V1
Non-repetitive peak off-state
voltage
V1
Voltage class
8
400
500
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Typical value
Conditions
Commercial frequency, sine full wave 360° conduction, T
c
=98°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
12
120
60
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
V1.
Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR12CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Gate trigger
current
V2
Gate trigger voltage
V2
Parameter
Repetitive peak off-state current
On-state voltage
!
@
#
!
@
#
T
j
=125°C, V
D
=1/2V
DRM
Junction to
case
V4
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, I
TM
=20A, Instantaneous measurement
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
V3
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
30
V5
30
V5
30
V5
—
1.8
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/
W
V/µs
V2.
Measurement using the gate trigger characteristics measurement circuit.
V3.
The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V4.
The contact thermal resistance R
th (c-f)
in case of greasing is 1.0°C/W.
V5.
High sensitivity (I
GT
≤20mA)
is also available. (I
GT
item
1)
(dv/dt)
c
Symbol
R
8
400
L
10
V/µs
R
12
600
L
10
—
Min.
—
1. Junction temperature
T
j
=125°C
2. Rate of decay of on-state commutat-
ing current
(di/dt)
c
=–6A/ms
3. Peak off-state voltage
V
D
=400V
Unit
Test conditions
Voltage
class
V
DRM
(V)
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
TIME
V
D
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
200
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
180
160
140
120
100
80
60
40
20
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
T
j
= 125°C
T
j
= 25°C
10
–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR12CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
100 (%)
10
2
7
5
3
2 V
GM
= 10V
10
1
7
5
3
2
P
GM
= 5W
P
G(AV)
=
0.5W
V
GT
= 1.5V
I
GM
= 2A
10
3
7
5
4
3
2
10
2
7
5
4
3
2
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
TYPICAL EXAMPLE
GATE VOLTAGE (V)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
I
RGT I,
I
RGT III
I
FGT I
10
0
7
5
3
2
V
GD
= 0.2V
I
RGT I
I
FGT I,
I
RGT III
10
–1
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
GATE CURRENT (mA)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
10
2
2 3 5 7 10
3
2
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
TRANSIENT THERMAL IMPEDANCE (°C/W)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
32
CASE TEMPERATURE (°C)
28
24 360°
CONDUCTION
20 RESISTIVE,
INDUCTIVE
16 LOADS
12
8
4
0
0
2
4
6
8
10
12
14
16
160
140
120
100
80
60
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
2
4
6
8
10
12
14
16
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR12CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
120 120 t2.3
100
100 100 t2.3
80
60 60 t2.3
60
RESISTIVE,
40 INDUCTIVE
LOADS
20 NATURAL
CONVECTION
0
0
2
4
6
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
NO FINS
140
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
120
RESISTIVE, INDUCTIVE LOADS
100
80
60
40
20
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
8
10
12
14
16
RMS ON-STATE CURRENT (A)
100 (%)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10
5
7 TYPICAL EXAMPLE
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
TYPICAL EXAMPLE
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT (mA)
10
0
–40
+
T
2
, G
+
TYPICAL
½
–
T
2
, G
–
EXAMPLE
0
40
80
120
160
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
DISTRIBUTION
+
T
2
, G
–
TYPICAL
EXAMPLE
Feb.1999
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR12CM
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
160
140
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
TYPICAL EXAMPLE
T
j
= 125°C
COMMUTATION CHARACTERISTICS
3 TYPICAL
2 EXAMPLE
10
2
T
j
= 125°C
7 I
T
= 4A
5
τ
= 500µs
3 V
D
= 200V
2 f = 3Hz
VOLTAGE WAVEFORM
t
(dv/dt)
C
V
D
CURRENT WAVEFORM
(di/dt)
C
I
T
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
120
100
80
60
40
20
#1
I QUADRANT
#2
III QUADRANT
τ
t
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
10
1
I QUADRANT
7
5
3 MINIMUM
2 CHARAC-
III QUADRANT
10
0
TERISTICS
7 VALUE
5
10
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A /ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
100 (%)
TYPICAL EXAMPLE
I
FGT I
I
RGT I
I
RGT III
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
6V
V
A
R
G
6V
V
A
R
G
TEST PROCEDURE
1
6Ω
TEST PROCEDURE
2
6V
V
A
R
G
GATE CURRENT PULSE WIDTH (µs)
TEST PROCEDURE
3
Feb.1999
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