MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR20AM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR20AM
OUTLINE DRAWING
Dimensions in mm
10.5 MAX.
4.5
➃
16
MAX.
3.2
±
0.2
7.0
1.3
12.5
MIN.
3.8 MAX.
TYPE
NAME
VOLTAGE
CLASS
φ
3.6
±
0.2
1.0
0.8
E
2.5
2.5
4.5
0.5
2.6
➀➁➂
➁➃
½
Measurement point of
case temperature
................................................................ 20A
q
V
DRM
................................................................. 600V
q
I
FGT
!
, I
RGT
!
, I
RGT
#
.................................... 20mA
q
I
T (RMS)
➀
➀
T
1
TERMINAL
➁
T
2
TERMINAL
➂
GATE TERMINAL
➂
➃
T
2
TERMINAL
TO-220
APPLICATION
Vacuum cleaner, light dimmer, copying machine, other control of motor and heater
MAXIMUM RATINGS
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
½1
Non-repetitive peak off-state
voltage
½1
Voltage class
12
600
720
Unit
V
V
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
—
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360°
60Hz sinewave 1 full cycle, peak value, non-repetitive
conduction, Tc=109°C
½3
Ratings
20
200
167
5
0.5
10
2
–40 ~ +125
–40 ~ +125
2.0
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Mar. 2002
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
½1.
Gate open.
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR20AM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Gate trigger
current
½2
Parameter
Repetitive peak off-state current
On-state voltage
!
Test conditions
T
j
=125°C, V
DRM
applied
T
c
=25°C, I
TM
=30A
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
10
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
20
20
20
—
0.8
—
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/
W
V/µs
Gate trigger
voltage
½2
@
#
!
@
#
T
j
=25°C, V
D
=6V, R
L
=6Ω, R
G
=330Ω
T
j
=125°C, V
D
=1/2V
DRM
Junction to case
½3 ½4
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
½5
T
j
=125°C
½2.
Measurement using the gate trigger characteristics measurement circuit.
½3.
Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
½4.
The contact thermal resistance R
th (c-f)
in case of greasing is 1°C/W.
½5.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
T
j
=125°C
2. Rate of decay of on-atate commutating current
(di/dt)
c
=–10A/ms
3. Peak off-state voltage
V
D
=400V
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
(di/dt)
c
TIME
TIME
V
D
TIME
MAIN
CURRENT
MAIN
VOLTAGE
(dv/dt)
c
PERFORMANCE CURVES
MAXIMUM ON-STATE
CHARACTERISTICS
10
3
240
RATED SURGE ON-STATE
CURRENT
SURGE ON-STATE CURRENT (A)
7
5
ON-STATE CURRENT (A)
3
2
200
160
120
80
40
0
10
0
10
2
7
5
3
2
T
j
= 125°C
10
1
7
5
3
2
T
j
= 25°C
10
0
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
2
3
5 7
10
1
2
3
5 7
10
2
CONDUCTION TIME
(CYCLES AT 60Hz)
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR20AM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
10
2
7
5
3
2
V
GM
= 10V
100 (%)
GATE CHARACTERISTICS
(Ι,
ΙΙ
AND
ΙΙΙ)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
3
2
TYPICAL EXAMPLE
10
1
7
5
3
V
GT
= 1.5V
2
P
GM
= 5W
P
G(AV)
=
0.5W
I
GM
=
2A
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
GATE VOLTAGE (V)
10
2
7
5
3
2
I
FGT I
I
RGT I
I
RGT III
10
0
7
5
3
2
10
1
7
5
3
2
I
FGT I,
I
RGT I,
I
RGT III
V
GD
= 0.2V
10
–1 1
10
2 3 5 7
10
2
2 3 5 7
10
3
2 3 5 7
10
4
GATE CURRENT (mA)
10
0
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
100 (%)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
TRANSIENT THERMAL IMPEDANCE (°C/W)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
2 3 57
10
2
2 3 57
10
3
CONDUCTION TIME
(CYCLES AT 60Hz)
TYPICAL EXAMPLE
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CASE TEMPERATURE (°C)
40
CURVES APPLY REGARDLESS
140 OF CONDUCTION ANGLE
30 360°
CONDUCTION
RESISTIVE,
INDUCTIVE
20 LOADS
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
0
5
10
15
10
0
0
5
10
15
20
25
30
20
25
30
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Mar. 2002
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR20AM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (°C)
140
120
100
80
60
40
20
0
0
5
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
NATURAL CONVECTION
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
140
120
100
80
60
40
20
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS ON-STATE CURRENT (A)
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
160 160 t 2.3
100 100 t 2.3
60 60 t 2.3
10
15
20
25
30
RMS ON-STATE CURRENT (A)
100 (%)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10
5
7
5
3
2
100 (%)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10
3
7
5
4
3
2
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
TYPICAL EXAMPLE
TYPICAL EXAMPLE
IH(typ) = 20mA
10
4
7
5
3
2
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
10
2
7
5
4
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
10
1
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
10
3
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
Mar. 2002
LACHING CURRENT (mA)
7
5
3
2
DISTRIBUTION
10
2
7
5
3
2
10
1
7
5
3
2
+
T
2
, G
+
TYPICAL
–
T
2
, G
–
EXAMPLE
10
0
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
T
2
, G
TYPICAL
EXAMPLE
+
–
MITSUBISHI SEMICONDUCTOR
〈TRIAC〉
BCR20AM
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
100 (%)
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
140
120
100
80
60
40
20
0
10
1
2 3 5 7
10
2
2 3 5 7
10
3
2 3 5 7
10
4
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
I QUADRANT
TYPICAL EXAMPLE
T
j
= 125°C
III QUADRANT
COMMUTATION CHARACTERISTICS
10
2
7
5
3
2
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
V
D
BREAKOVER VOLTAGE (dv/dt = xV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
10
1
7
5
MINIMUM
TYPICAL
EXAMPLE
T
j
= 125°C
I
T
= 4A
τ
= 500µs
V
D
= 200V
f = 3Hz
III QUADRANT
CHARAC-
3
TERISTICS
2
VALUE
10
0
7
3
5
I QUADRANT
7
10
1
2
3
5
7
10
2
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
100 (%)
10
3
7
5
3
2
TYPICAL EXAMPLE
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
I
FGT I
I
RGT I
I
RGT III
10
2
7
5
3
2
10
1 0
10
2
3
5 7
10
1
2
3
5 7
10
2
GATE TRIGGER PULSE WIDTH (µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6Ω
6V
V
A
330Ω
6V
V
A
330Ω
TEST PROCEDURE
1
6Ω
TEST PROCEDURE
2
6V
V
A
330Ω
TEST PROCEDURE
3
Mar. 2002
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