BCP52; BCX52
60 V, 1 A PNP medium power transistors
Rev. 08 — 25 February 2008
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series.
Table 1.
Product overview
Package
NXP
BCP52
BCX52
[1]
Type number
[1]
NPN complement
JEITA
SC-73
SC-62
JEDEC
-
TO-243
BCP55
BCX55
SOT223
SOT89
Valid for all available selection groups.
1.2 Features
I
High current
I
Two current gain selections
I
High power dissipation capability
1.3 Applications
I
I
I
I
Linear voltage regulators
High-side switches
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
single pulse; t
p
≤
1 ms
V
CE
=
−2
V;
I
C
=
−150
mA
V
CE
=
−2
V;
I
C
=
−150
mA
V
CE
=
−2
V;
I
C
=
−150
mA
Conditions
open base
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
−60
−1
−1.5
250
160
250
Unit
V
A
A
NXP Semiconductors
BCP52; BCX52
60 V, 1 A PNP medium power transistors
2. Pinning information
Table 3.
Pin
SOT223
1
2
3
4
base
collector
emitter
collector
1
2
3
3
sym028
Pinning
Description
Simplified outline
Symbol
4
1
2, 4
SOT89
1
2
3
emitter
collector
base
3
2
1
3
1
006aaa231
2
3. Ordering information
Table 4.
Ordering information
Package
Name
BCP52
BCX52
[1]
Type number
[1]
Description
plastic surface-mounted package with increased
heatsink; 4 leads
Version
SOT223
SC-73
SC-62
plastic surface-mounted package; collector pad for good SOT89
heat transfer; 3 leads
Valid for all available selection groups.
4. Marking
Table 5.
BCP52
BCP52-10
BCP52-16
BCX52
BCX52-10
BCX52-16
Marking codes
Marking code
BCP52
BCP52/10
BCP52/16
AE
AG
AM
Type number
BCP52_BCX52_8
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 08 — 25 February 2008
2 of 12
NXP Semiconductors
BCP52; BCX52
60 V, 1 A PNP medium power transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
BCP52
BCX52
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
[1]
[2]
[1]
[2]
[3]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
Max
−60
−60
−5
−1
−1.5
−0.2
Unit
V
V
V
A
A
A
-
-
-
-
-
-
−65
−65
0.65
1
0.5
0.9
1.3
150
+150
+150
W
W
W
W
W
°C
°C
°C
T
j
T
amb
T
stg
[1]
[2]
[3]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
BCP52_BCX52_8
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 08 — 25 February 2008
3 of 12
NXP Semiconductors
BCP52; BCX52
60 V, 1 A PNP medium power transistors
1.6
P
tot
(W)
1.2
(1)
006aaa220
1.6
P
tot
(W)
1.2
006aaa221
(1)
(2)
0.8
(2)
0.8
(3)
0.4
0.4
0
−75
−25
0
25
75
125
175
T
amb
(°C)
0
−75
−25
0
25
75
125
175
T
amb
(°C)
(1) FR4 PCB, mounting pad for collector 1 cm
2
(2) FR4 PCB, standard footprint
(1) FR4 PCB, mounting pad for collector 6 cm
2
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves SOT223
Fig 2. Power derating curves SOT89
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
BCP52
BCX52
Conditions
in free air
[1]
[2]
[1]
[2]
[3]
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
-
190
125
230
135
95
K/W
K/W
K/W
K/W
K/W
R
th(j-sp)
thermal resistance from
junction to solder point
BCP52
BCX52
-
-
-
-
17
20
K/W
K/W
[1]
[2]
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
BCP52_BCX52_8
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 08 — 25 February 2008
4 of 12
NXP Semiconductors
BCP52; BCX52
60 V, 1 A PNP medium power transistors
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
1
0.5
0.2
0.1
10
0.05
0.02
0.01
1
0
0.75
0.33
006aaa223
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
006aaa817
1.0
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
10
1
0
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for collector 1 cm
2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
BCP52_BCX52_8
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 08 — 25 February 2008
5 of 12
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