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RJK1555DPA-00-J0

Description
25 A, 150 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size70KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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RJK1555DPA-00-J0 Overview

25 A, 150 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET

RJK1555DPA-00-J0 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
package instructionSMALL OUTLINE, R-XDSO-N5
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage150 V
Maximum drain current (Abs) (ID)25 A
Maximum drain current (ID)25 A
Maximum drain-source on-resistance0.048 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XDSO-N5
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)30 W
Maximum pulsed drain current (IDM)50 A
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
RJK1555DPA
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1783-0100
Rev.1.00
Apr 02, 2009
Features
Low on-resistance
Low drive current
High density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
10
µs,
duty cycle
1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch
150°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
Note2
θch-c
Tch
Tstg
Ratings
150
±30
25
50
25
50
22
36.3
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1783-0100 Rev.1.00 Apr 02, 2009
Page 1 of 3

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RJK1555DPA-00-J0 RJK1555DPA
Description 25 A, 150 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET 25 A, 150 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET
Shell connection DRAIN DRAIN
Number of components 1 1
Number of terminals 5 5
surface mount YES Yes
Terminal form NO LEAD NO LEAD
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON

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