RJK03B7DPA
Silicon N Channel Power MOS FET
Power Switching
REJ03G1789-0200
Rev.2.00
Apr 03, 2009
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 6.0 m
Ω
typ. (at V
GS
= 10 V)
•
Pb-free
•
Halogen-free
•
•
•
•
•
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tch = 25°C, Rg
≥
50
Ω
3. Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP
E
AR Note 2
Pch
Note3
θch-c
Note3
Tch
Tstg
Note 2
Ratings
30
±20
30
120
30
12
14.4
30
4.17
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1789-0200 Rev.2.00 Apr 03, 2009
Page 1 of 6
RJK03B7DPA
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
6.0
7.7
80
1670
225
115
1.0
11
5.0
2.6
9.6
4.8
37
5.2
0.86
15
Max
—
± 0.1
1
2.5
7.8
10.7
—
—
—
—
—
—
—
—
—
—
—
—
1.12
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±20 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 15 A, V
GS
= 10 V
Note4
I
D
= 15 A, V
GS
= 4.5 V
Note4
I
D
= 15 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 30 A
V
GS
= 10 V, I
D
= 15 A
V
DD
≅
10 V
R
L
= 0.67
Ω
Rg = 4.7
Ω
I
F
= 30 A, V
GS
= 0
Note4
I
F
=30 A, V
GS
= 0
di
F
/ dt = 100 A/
µs
REJ03G1789-0200 Rev.2.00 Apr 03, 2009
Page 2 of 6
RJK03B7DPA
Main Characteristics
Power vs. Temperature Derating
40
1000
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
30
100
10
µ
s
0
10
ms
1
µ
s
20
10
PW = 10 ms
10
Operation in
1
this area is
limited by R
DS(on)
Tc = 25 °C
0.1
1 shot Pulse
0.1
1
DC
er
Op
ion
at
0
50
100
150
200
10
100
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
20
4.5 V
10 V
20
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Pulse Test
3.0 V
Drain Current I
D
(A)
3.2 V
12
Drain Current I
D
(A)
16
16
12
8
V
GS
= 2.8 V
8
4
4
25°C
Tc = 75°C
–25°C
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(mV)
400
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source On State Registance
R
DS(on)
(mΩ)
100
Pulse Test
Pulse Test
30
300
200
10
V
GS
= 4.5 V
10 V
I
D
= 20 A
100
10 A
5A
3
0
4
8
12
16
20
1
1
3
10
30
100
300 1000
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
REJ03G1789-0200 Rev.2.00 Apr 03, 2009
Page 3 of 6
RJK03B7DPA
Static Drain to Source on State Resistance
vs. Temperature
Drain to Source On State Registance
R
DS(on)
(mΩ)
25
Pulse Test
Typical Capacitance vs.
Drain to Source Voltage
10000
3000
Capacitance C (pF)
20
1000
300
Ciss
15
I
D
= 5 A, 10 A, 20 A
V
GS
= 4.5 V
10
Coss
100
Crss
30
10
0
V
GS
= 0
f = 1 MHz
5
0
–25
10 V
5 A, 10 A, 20 A
0
25
50
75
100 125 150
10
20
30
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
50
I
D
= 30 A
V
GS
V
DD
= 25 V
10 V
Reverse Drain Current vs.
Source to Drain Voltage
20
50
Gate to Source Voltage V
GS
(V)
Reverse Drain Current I
DR
(A)
10 V
Pulse Test
40
16
40
5V
30
V
DS
12
30
20
8
20
V
GS
= 0, –5 V
10
V
DD
= 25 V
10 V
4
10
0
0
8
16
24
32
40
0
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
20
I
AP
= 12 A
V
DD
= 15 V
duty < 0.1%
Rg
≥
50
Ω
16
12
8
4
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
REJ03G1789-0200 Rev.2.00 Apr 03, 2009
Page 4 of 6
RJK03B7DPA
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
1
D=1
0.5
0.3
0.2
0.1
0.1
5
0.0
1s
0.03
ho
t
0.
pu
01
ls
e
0.
02
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 4.17°C/W, Tc = 25°C
P
DM
PW
T
D=
PW
T
0.01
10
µ
100
µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
Rg
D. U. T
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
I
D
Vin
15 V
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 10 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
REJ03G1789-0200 Rev.2.00 Apr 03, 2009
Page 5 of 6
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