2SD1994A
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
NPN
General Purpose Transistor
FEATURES
Low collector-emitter saturation voltage V
CE(sat)
Allowing supply with the radial taping
G
H
TO-92
1Emitter
2Collector
3Base
D
B
K
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
J
A
Collector
2
3
Base
E
C
F
1
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
a
= 25°C unless otherwise specified)
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current
Total Power Dissipation
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
STG
Ratings
60
50
5
1
1
+150, -55 ~ +150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS
(T
a
= 25°C unless otherwise specified)
Parameter
Collector - Base Breakdown Voltage
Collector - Emitter Breakdown Voltage
Emitter - Base Breakdown Voltage
Collector Cut - Off Current
Emitter Cut - Off Current
DC Current Gain
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
Cob
Min.
60
50
5
-
-
85
50
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
200
-
Max.
-
-
-
0.1
0.1
340
-
0.4
1.2
-
20
Unit
V
V
V
μA
μA
Test Conditions
I
C
= 10
μA,
I
E
= 0
I
C
= 2 mA, I
B
= 0
I
E
= 10
μA,
I
C
= 0
V
CB
= 20V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 10V, I
C
= 500 mA
V
CE
= 5V, I
C
= 1 A
I
C
= 500mA, I
B
= 50 mA
I
C
= 500mA, I
B
= 50 mA
V
CE
= 10V, I
B
= 50 mA, f = 200MHz
V
CB
= 10V,I
E
= 0, f = 1MHz
V
V
MHz
pF
CLASSIFICATION OF h
FE(1)
Rank
Range
Q
85 - 170
R
120 - 240
S
170 - 340
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-December-2008 Rev. B
Page 1 of 3
2SD1994A
Elektronische Bauelemente
NPN
General Purpose Transistor
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-December-2008 Rev. B
Page 2 of 3
2SD1994A
Elektronische Bauelemente
NPN
General Purpose Transistor
CHARACTERISTIC CURVES (cont’d)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-December-2008 Rev. B
Page 3 of 3
Embedded System
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