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B4S

Description
0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size110KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric Compare View All

B4S Overview

0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

B4S Parametric

Parameter NameAttribute value
MakerSECOS
Reach Compliance Codecompli
B1S
THRU
B10S
Elektronische Bauelemente
VOLTAGE 100V ~ 1000V
0.8AMP Glass Passivated Bridge Rectifiers
RoHS Compliant Product
A suffix of "-C" specifies halogen-free.
MDS
+
2.75(7.0)
MAX.
.157(4.0)
.141(3.6)
FEATURES
~
~
.
Rating to 1000 PRV
.
Ideal for printed circuit board
.
Reliable low cost construction utilizing
molded plastic technique results in inexpensive product
.043(1.1)
.027(0.7)
.043(1.1) .008(0.2)
.027(0.7)
MAX.
.031(0.8)
.023(0.6)
.193(4.9)
.177(4.5)
.118(3.0)
MAX.
.106(2.7)
.090(2.3)
.
Lead tin plated copper
.106(2.7)
.090(2.3)
Dimensions in inches and (millimeters)
MECHANICAL DATA
.
Polarity: Symbol molded on body
.
Mounting position: Any
.
Weight: 0.125 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25
ambient temperature unless otherwise specified.
Resistive or inductive load, 60Hz,
For capacitive load, derate current by 20%.
TYPE NUMBER
SYMBOL
Maximum Recurrent Peak Reverse Voltage
V
RRM
Maximum RMS Voltage
V
RMS
Maximum DC Blocking Voltage
V
DC
Maximum Average Forward Rectified
I
F(AV)
Output Current (Note1) @ Ta=40
Peak Forward Surge Current,
I
FSM
8.3 ms Single Half Sine-Wave
Superimposed on Rated Load (JEDEC Method)
Maximum Forward Voltage @0.4A DC
V
F
Maximum DC Reverse Current
I
R
at Rated DC Blocking Voltage per Element
Typical Junction Capacitance
C
J
Per Element (Note2)
Typical Thermal Resistance (Note3)
R JA
Operating Temperature Range
T
J
Storage Temperature Range
T
STG
Notes:
1. Mounted on P.C. Board.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Ambient.
B1S
100
70
100
B2S
200
140
200
B4S
400
280
400
0.8
30
1.0
5
500
15
75
-55 ~ +150
-55 ~ +150
B6S
600
420
600
B8S
800
560
800
B10S
1000
700
1000
UNITS
V
V
V
A
A
V
(@T
J
=25 )
(@ T
J
=125 )
µA
pF
/W
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 2

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Description 0.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 0.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 0.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 0.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Maker SECOS SECOS SECOS SECOS SECOS SECOS
Reach Compliance Code compli compli compli compliant compliant compli

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