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BAS21W

Description
SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size232KB,1 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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SIGNAL DIODE

BAS21W Parametric

Parameter NameAttribute value
MakerSECOS
Reach Compliance Codecompli
BAS21W
Elektronische Bauelemente
FEATURES
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Applications
High Conductance
1
3
1
3
Surface Mount Switching Diode
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
L
B S
Top View
2
V
G
C
D
H
K
J
3
CATHODE
1
ANODE
2
MAXIMUM RATINGS
Parameter
Continuous Reverse Voltage
Average Rectified Output Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
VR
Io
PD
R
θ
JA
TJ, Tstg
Value
200
200
200
625
±55 to +150
Unit
Vdc
mA
mW
ο
C/W
ο
SOT-323(SC-70)
Dim
A
B
C
D
G
H
J
K
L
S
V
Min
1.800
1.150
0.800
0.300
1.200
0.000
0.100
0.350
0.590
2.000
0.280
Max
2.200
1.350
1.000
0.400
1.400
0.100
0.250
0.500
0.720
2.400
0.420
C
DEVICE MARKING
BAS21W = KT3
ELECTRICAL CHARACTERISTICS
(TA = 25
o
C unless otherwise noted)
Characteristic
Reverse Voltage Leakage Current
(VR = 200 V)
Reverse Breakdown Voltage
(IR = 100
µAdc)
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 30 mAdc, Irr = 0.1 x I
R
)
Symbol
IR
V(BR)
200
Min
Max
0.1
Unit
µAdc
Vdc
VF
CD
trr
1
1.25
5
50
V
All Dimension in mm
pF
ns
TYPICAL CHARACTERISTICS
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of
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