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BC546C

Description
NPN SILICON RF SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size174KB,3 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Environmental Compliance
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NPN SILICON RF SMALL SIGNAL TRANSISTOR

BC546C Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage65 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
Elektronische Bauelemente
RoHS Compliant Product
BC546, B, C
BC547, A, B, C
BC548, A, B, C
TO-92
FEATURES
NPN Transistpr
Power dissipation
P
CM:
Collector current
I
CM:
Collector-base voltage
V
CBO
:
A suffix of "-C" specifies halogen & lead-free
0.625
0.1
W (Tamb=25℃)
A
1
2
3
3
1 2
3
BC546
80
V
BC547
50
V
BC548
30
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
2
1. COLLECTOR
2. BASE
1
3
. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
BC546
BC547
BC548
Collector-emitter breakdown voltage
BC546
BC547
BC548
Emitter-base breakdown voltage
Collector cut-off current
BC546
BC547
BC548
Collector cut-off current
BC546
BC547
BC548
Emitter cut-off current
BC546
BC547
BC548
DC current gain
BC546
BC547
BC548
BC547A/548A
BC546B/BC547B/BC548B
BC546C/BC547C/BC548C
unless
Symbol
otherwise
Test
specified)
MIN
80
MAX
UNIT
conditions
V
CBO
Ic= 100µA , I
E
=0
50
30
65
V
V
CEO
I
C
= 1mA , I
B
=0
45
30
V
V
EBO
I
E
= 10µA, I
C
=0
V
CB
= 70V, I
E
=0
6
0.1
V
I
CBO
V
CB
= 50 V, I
E
=0
V
CB
= 30V, I
E
=0
V
CE
= 60 V, I
B
=0
µA
I
CEO
V
CE
= 45 V, I
B
=0
V
CE
= 30 V, I
B
=0
0.1
µA
I
EBO
V
EB
= 5V, I
C
=0
110
110
110
110
200
420
0.1
800
800
800
220
450
800
0.3
1
µA
h
FE(1)
V
CE
=5V, I
C
= 2mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
I
C
=100 mA, I
B
= 5mA
I
C
= 100 mA, I
B
=5mA
V
CE
= 5V, I
C
= 10mA
V
V
Transition frequency
f
T
f =
100MHz
150
MHz
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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