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BC856W

Description
100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size259KB,4 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
Download Datasheet Parametric Compare View All

BC856W Overview

100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BC856W Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current0.1000 A
Maximum Collector-Emitter Voltage45 V
Processing package descriptionUSM, 3 PIN
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum ambient power consumption0.1000 W
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor125
Rated crossover frequency150 MHz
BC856W…BC860W
PNP Silicon Epitaxial Planar Transistor
for general purpose and switching applications
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
BC856W
BC857W
BC858W
BC859W
BC860W
Collector Emitter Voltage
BC856W
BC857W
BC858W
BC859W
BC860W
Emitter Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
-V
CEO
65
45
30
30
45
5
100
100
200
150
- 55 to + 150
V
-V
CBO
80
50
30
30
50
V
Symbol
Value
Unit
-V
EBO
-I
C
-I
CM
P
tot
T
j
T
S
V
mA
mA
mW
O
C
C
O
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 2
1
/0
6
/2006

BC856W Related Products

BC856W BC857W BC858W BC859W BC860W
Description 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR PNP general purpose transistors
Number of terminals 3 3 3 3 -
Transistor polarity PNP PNP PNP PNP -
Maximum collector current 0.1000 A 0.1000 A 0.1000 A 0.1000 A -
Maximum Collector-Emitter Voltage 45 V 45 V 45 V 45 V -
Processing package description USM, 3 PIN USM, 3 PIN USM, 3 PIN USM, 3 PIN -
state ACTIVE ACTIVE ACTIVE ACTIVE -
packaging shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
surface mount Yes Yes Yes Yes -
Terminal form GULL WING GULL WING GULL WING GULL WING -
Terminal location DUAL DUAL DUAL DUAL -
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
structure SINGLE SINGLE SINGLE SINGLE -
Number of components 1 1 1 1 -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON SILICON SILICON SILICON -
Maximum ambient power consumption 0.1000 W 0.1000 W 0.1000 W 0.1000 W -
Transistor type GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL -
Minimum DC amplification factor 125 125 125 125 -
Rated crossover frequency 150 MHz 150 MHz 150 MHz 150 MHz -
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