MMBTRC110SS…MMBTRC114SS
NPN Silicon Epitaxial Planar Transistor
for switching and interface circuit and drive circuit
applications
Features
• With built-in bias resistors
• Simplify circuit design
• Reduce a quantity of parts and
manufacturing process
Base
R1
Collector
Emitter
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
S
Value
50
50
5
100
200
150
- 55 to + 150
Unit
V
V
V
mA
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 5 V, I
C
= 1 mA
Collector Cutoff Current
at V
CB
= 50 V
Emitter Cutoff Current
at V
EB
= 5 V
Collector Emitter Saturation Voltage
at I
C
= 10 mA, I
B
= 0.5 mA
Transition Frequency
at V
CE
= 10 V, I
C
= 5 mA
MMBTRC110SS
MMBTRC111SS
MMBTRC112SS
MMBTRC113SS
MMBTRC114SS
Symbol
h
FE
I
CBO
I
EBO
V
CE(sat)
f
T
Min.
120
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
250
4.7
10
100
22
47
Max.
-
100
100
0.3
-
-
-
-
-
-
Unit
-
nA
nA
V
MHz
Input Resistor
R
1
KΩ
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 08/12/2006
京公网安备 11010802033920号
EEWORLD
